






M4ELC Materials for electronics
This Research Line is devoted to progress in organic and oxide-electronic devices with the aim of gaining fundamental insights and showcasing the potential of these materials for future emerging technologies. The Research Line is divided in five different challenges:
Challenge 1 focuses on the development of organic (opto)electronic devices. Notably, in 2024, significant progress has been made in understanding how chemical functionalization affects the conductance of molecular junctions. Additionally, hybrid surfaces modified with molecular monolayers capable of modulating their fluorescence under electrical stimuli have been successfully demonstrated.
Challenge 2 centers on the creation of next-generation sensors and quantum devices by engineering heterostructures that combine functional materials in unconventional ways — including oxide ferromagnetic, antiferromagnetic, ferrimagnetic, and superconducting components. A recent highlight is the demonstration of pure spin current generation and transport in optimised La₂/₃Sr₁/₃MnO₃ (LSMO)/NiO/Pt heterostructures.
Challenge 3 aims to develop materials for energy-efficient and ultrafast computing. In this respect, the discovery of ferroelectricity in HfO₂-based materials has generated substantial interest in the field. Recently, ICMAB researchers demonstrated photoferroelectric effects in hafnia-based devices, where light is used to perform write and read operations. Furthermore, they reported a magnetoresistive method for detecting magnetization reversal in the ferrimagnetic insulator terbium iron garnet (TbIG), offering promising avenues for the development of non-volatile memories.
Challenge 4 seeks to understand correlated and frustrated magnetic materials with complex states and transitions, targeting quantum physics applications. Among the highlights is a report on YBaCuFeO₅ single crystals, revealing critical features for achieving high-temperature magnetoelectric responses induced by the spiral phase. In parallel, ICMAB researchers have advanced in the understanding of the interplay between the Jahn-Teller effect and spin-orbit coupling in 4d and 5d transition metal systems, opening new perspectives for designing novel quantum materials.
Challenge 5 explores emerging functionalities in curved materials, supported by first-principles predictions. Notably, it has been shown that a lattice mode of arbitrary symmetry can induce a well-defined macroscopic polarization — first order in momentum and second order in amplitude.

A. S. Miñarro, M. Villa, B. Casals, S. Plana-Ruiz, F. Sánchez, J. Gázquez, G. Herranz
https://doi.org/10.1038/s41467-024-52848-8
We have uncovered a surprising interplay between two key fundamental phenomena in materials, namely, the Jahn-Teller effect, which distorts the atomic lattice around trapped electrons, and spin-orbit coupling, which links an electron’s spin to its motion. Traditionally, both phenomena are thought to counteract each other. However, our study shows that, unexpectedly, Jahn-Teller distortions can actually induce strong spin-orbit entanglement, where spin and orbital degrees of freedom become mutually reinforced, which represents a unique case where spin-orbit coupling and Jahn-Teller effects act synergistically. To reveal this strong spin-orbital mixing, we have used cutting-edge electron microscopy and optical spectroscopy. Our finding could open new paths for designing quantum materials, harnessing both local structural distortions and spin-orbit interactions.

H. Tan, A. Quintana, N. Dix, S. Estandía, J. Sort, F. Sánchez , I. Fina
The discovery of ferroelectricity in HfO2 has renewed the interest of the scientific community on ferroelectrics. Besides being compatible with CMOS technology, this material could foster the development of devices with novel functionalities. Control of nanoelectronic devices with light, to perform data-transfer processes, has been shown to be an efficient tool to boost energy efficiency. Implementation of devices able to perform read/write operation by optical stimuli would also allow circuitry reduction combining image detection and computing. In our work we demonstrate that, in hafnia-based devices, light can be used both for remote optical writing and non-destructive optical reading operations, thereby pioneering on the demonstration of photoferroelectric effects in HfO2.

T. Cardona-Lamarca, T. Y. Baum, R. Zaffino, D. Herrera, R. Pfattner, S. Gómez-Coca, E. Ruiz, A. González-Campo, H. S. J. van der Zant, N. Aliaga-Alcalde
Taking advantage of curcuminoids (CCMoids) as molecular platforms, a 3.53 nm extended system (pyACCMoid, 2) was designed in two steps by reacting an amino-terminal CCMoid (1.79 nm, NH2-CCMoid, 1) with polycyclic aromatic hydrocarbon (PAH) aldehydes. CCMoid 2 features pyrene units as anchoring groups to optimize trapping in graphene nano-junctions formed by feedback-controlled electroburning. I–V measurements show gate-dependent behavior at room temperature and 10 K, with higher conductance than previously reported shorter CCMoids, in agreement with DFT calculations. The improved design enhances conductance by separating the conductive backbone from the anchoring groups, which adopt a planar configuration when in contact with graphene. DFT studies reveal that conductance is more influenced by the molecular units (e.g., pyrene, amide) involved in electron injection than by the electrode gap, with smaller gaps not necessarily yielding higher conductance.

A. Campos-Lendinez, J. Muñoz, N. Crivillers, M. Mas-Torrent
In this work, highly fluorescent single active layers of CdSe/ZnS Quantum Dots (QDs) were prepared by reacting the QDs in suspension with an amino-functionalized indium-tin oxide (ITO) surface, enabling specific substrate/particle interactions. The grafted QDs were then further chemically modified with redox-active ferrocene (Fc) thiolated molecules. Upon applying a voltage to the ITO substrate, the Fc moieties underwent electrochemical oxidation, leading to fluorescence quenching via exciton dissociation driven by the electron transfer between CdSe QDs and the oxidized Fc⁺. This enabled the fabrication of robust and reversible fluorescent electrochemical switches, with the ON/OFF ratio controlled by the Fc-QD distance and the number of oxidized/reduced Fc moieties. Having a QD single layer on surface, avoids aggregation problems or effects derived from multilayer formation that may hinder the optical tunability of these or other similar systems. Thus, this platform opens new avenues for sensing and information storage applications.

S. Damerio, A. Sunil, M. Mehraeen, S. S.-L. Zhang., C. O. Avci
In this paper we introduce a simple magnetoresistive method to detect magnetization reversal in terbium iron garnet (TbIG), a ferrimagnetic insulator. Our trilayer system—TbIG|Cu|TbCo—uses in-plane resistance measurements to read out TbIG’s magnetic state without heavy metals or spin Hall effects. Resistance changes occur during out-of-plane field sweeps, analogous to GMR in spin valves. The signal arises from spin-dependent scattering at the TbIG|Cu interface. Tuning Cu thickness and temperature confirms this mechanism, supported by Boltzmann transport modeling. Our two-terminal design offers a robust, low-power, and scalable approach for integrating magnetic insulators into spintronic devices and paves the way for non-volatile memory using ferrimagnetic garnets.

A. Romaguera, O. Fabelo, N. Qureshi, J. A. Rodríguez-Velamazán and J. L. García-Muñoz
A well-established case of strongly coupled electric and magnetic order is spiral magnetic order. The low ordering temperature of most non-collinear spiral magnets critically limits their implementation in devices. The layered perovskites LnBaCuFeO5 are promising high-temperature spiral magnets and chiral spin-driven multiferroic candidates. Though a non-conventional mechanism of ‘spiral order by disorder’ could be the key of their presumed spiral order, such order was alleged on the basis of non-conclusive neutron data on powder samples. Here, a YBaCuFeO5 single crystal has been grown with enough Cu/Fe disorder to stabilize the incommensurate magnetic phase up to TS » 200 K. Utilizing spherical neutron polarimetry and single-crystal neutron diffraction, we have demonstrated the non-collinear chiral nature of the magnetic domains in the singular incommensurate phase. It is thus finally proved that such phase is spiral in our crystal, and therefore also in those compositions of this perovskite family where TS values well above room temperature have been reported. Yet, the study also illustrates critical features of relevance to the search for high-temperature magnetoelectric response induced by the spiral phase.

S. Chen , A. Pomar, Ll. Balcells, Z. Konstantinovic , C. Frontera , C. Magén , N. Mestres , B. Martinez
This paper examines how pure spin currents are generated, transmitted, and detected in layered structures made of La₂/₃Sr₁/₃MnO₃ (LSMO), nickel oxide (NiO), and platinum (Pt). Spin currents are created in the LSMO layer via spin pumping and detected in the Pt layer using the inverse spin Hall effect (ISHE). The study focuses on how the thickness and temperature of the NiO layer affect spin current transmission.
The NiO layers, grown at room temperature, were polycrystalline. Thin NiO layers (less than ~2 nm) were found to be discontinuous, allowing partial LSMO/Pt contact, while thicker layers were continuous. Magnetic tests showed that NiO remained paramagnetic even at low temperatures, with no signs of antiferromagnetic ordering.
ISHE voltage measurements revealed that spin current transmission peaked at around 1 nm of NiO thickness, then declined exponentially with further increases. This indicates two spin transport regimes with different spin diffusion lengths: ~0.8 nm for thin, discontinuous NiO and ~3.8 nm for thicker, continuous films.
A key finding is that a thin (~1 nm) paramagnetic NiO layer can actually enhance LSMO/Pt interface’s spin transparency, allowing more efficient spin current transmission, likely due to magnetic correlations and short-range thermal magnons. The influence of microstructure and interface quality on spin transport still requires deeper study and it is current under investigation.

M. Stengel
10.1103/PhysRevLett.132.146801
The interaction between structural, polar, and magnetic degrees of freedom in multiferroics has long been identified as a promising source of advanced material functionalities. The recent focus on inhomogeneous structures such as skyrmions, domain walls, and vortices has renewed the interest in the so-called Lifshitz invariants (LIs), i.e., coupling terms that depend on the first gradient of one order parameter component. A quantitative understanding of the coupling coefficients is essential for modelling the emergence of a spatially modulated order in a ferroic crystal, and for the rational design of novel materials with tailored properties. Here we focus on the interaction between structural order parameters (e.g., polarization and/or antiferrodistortive tilts in perovskite-structure crystals), where we identify a symmetric flexoelectric-like contribution and an antisymmetric Dzialoshinskii-Moriya-like term. We discuss the fundamentals of both, and identify a critical role of the electrical and mechanical boundary conditions, which was insofar overlooked.